Abstract
In this work, solution-processed white quantum dot light-emitting diodes (WQLEDs) were demonstrated by using the zinc oxide quantum dots (ZnO-QDs) as both a white fluorescent emitter as well as an effective electron injection layer. Meanwhile, a thin insulating passivation layer of polystyrene (PS) was inserted between the ZnO-QDs layer and aluminum cathode to optimize the electron injection into the device and reduce the non-radiative recombination at the interface between ZnO-QDs layer and cathode. Our findings reveal that strategically incorporating a thin PS insulating passivation interlayer between the ZnO-QDs and the aluminum cathode effectively reduces the surface defects of the ZnO-QDs as well as the infiltration of metal atoms into the ZnO-QD layer. Consequently, the WQLEDs with such an insulating PS interlayer exhibit a high brightness of 1076 cd/m2, showing a great improvement of∼40 % compared with that of WQLEDs without PS passivation interlayer (780 cd/m2). This work provides an efficient method to realize single component WQLEDs, thus bringing a feasible solution for next-generation solid-state lighting technologies.
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