Abstract
The performance of phase change memory (PCM) cell, based on Ti0.5Sb2Te3, was significantly improved by using a tantalum dioxide buffer layer. The presence of a buffer layer reduced the reset voltage of the PCM cell. The theoretical thermal simulation and calculation for the reset process were conducted to analyze the thermal effect of the titanium dioxide heating layer. The improved performance of the PCM cell with dioxide clad layer can be attributed to the fact that the buffer layer not only acted as heating layer but also efficiently reduced the cell dissipated power.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
