Abstract
The performance of phase change memory (PCM) cell, based on Ge2Sb2Te5, was significantly improved by using a CeO2 buffer layer. The presence of a buffer layer remarkably reduced the reset voltage of the PCM cell. Even at voltage pulse width of 10 ns, the buffered PCM cell could accomplish reset operation. Theoretical thermal simulation of reset process was conducted. It is concluded that the improved performance of the PCM cell with a CeO2 buffer layer can be attributed to the fact that the buffer layer not only acted as heating layer but also reduced efficiently the cell dissipated power.
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