Performance improvement of nano wire TFET by hetero-dielectric and hetero-material: At device and circuit level

Abstract

In this paper, a low band gap material and hetero-dielectric based silicon germanium source nano wire TFET (SiGe-S-NW-TFET) is created and compared with conventional silicon nano wire TFET (Si-NW-TFET). Both devices are analysed for its DC and RF/Analog performance. Proposed device achieves higher ON-current and steeper characteristic. Simulated results of RF analysis validate the device suitability for analog application as it attains high transconductance, cut-off frequency and GBP. Apart from this, linearity analysis is also done in terms of various FOMs like higher order of gm, second-order voltage intercept point, third-order voltage intercept point and third-order intermodulation distortion. Furthermore optimization of proposed device is also done for different diameter and channel length. For checking the device suitability in low power application two stage operational amplifier is implemented using unique characteristic of SiGe-S-NW-TFET which exhibits a high gain, high PSRR and GBW of 90.5 db, −47.4 dB and 78.61 MHz respectively. The objective of this paper is to attract the attention of semiconductor industry to find opportunity beyond CMOS technology. As NW-TFET structure has very low OFF-current it consumes very low power of 4.45 μW which ensures device applicability in low power application.