Performance Improvement of Metal–Insulator–Metal Capacitors Using Postmetallization-Annealed Treatment on the Al[sub 2]O[sub 3]∕TiO[sub 2]∕Al[sub 2]O[sub 3] Film

Abstract

This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al 2 O 3 /TiO 2 /Al 2 O 3 laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO 2 capacitors, deposition of the Al 2 O 3 layer enables significant leakage current reduction while maintaining good electrical performance. For an Al 2 O 3 /TiO 2 /Al 2 O 3 film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4 X 10 -9 A/cm 2 at 1 V for 18.3 fF/μm 2 density Al 2 O 3 /TiO 2 /Al 2 O 3 MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/μm 2 density and J/(CV) < 7 fA/(pFV).