Abstract

The contact effect on the performances of organic thin film transistors is studied here. A C60 ultrathin layer is inserted between Al source—drain electrode and pentacene to reduce the contact resistance. By a 3 nm C60 modification, the injection barrier is lowered and the contact resistance is reduced. Thus, the field-effect mobility increases from 0.12 to 0.52 cm2/(V·s). It means that inserting a C60 ultra thin layer is a good method to improve the organic thin film transistor (OTFT) performance. The output curve is simulated by using a charge drift model. Considering the contact effect, the field effect mobility is improved to 1.15 cm2/(V·s). It indicates that further reducing the contact resistance of OTFTs should be carried out.

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