Abstract
In this paper, we demonstrate a charge trapping memory with aluminum nanocrystals (Al- NCs) embedded in Al2O3 high-k dielectric. Compared to metal/Al2O3/SiO2/Si structure, this device exhibits a larger memory window (6.7 V at ±12 V), faster program/erase speed and good endurance. In particular, data retention is improved greatly both at room temperature and in high-temperature (up to 150 °C). The results indicate that the device with the embedding Al-NCs in Al2O3 film has a strong potential for future high-performance nonvolatile memory application.
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