Fabrication and Characterization of p-Channel Charge Trapping Type FOI-FinFET Memory with MAHAS Structure

Abstract

A type of p-channel fin-on-insulator (FOI) FinFET charge trapping memory devices with HfO2 charge trapping layer, Al2O3 tunneling layer and blocking layers along with [TiN/W] metal gate (Metal/Al2O3/HfO2/Al2O3/Si, named as MAHAS in short) have been successfully fabricated. It is found that the new non-volatile memory, named in FOI-MAHAS memory shows better performance as compared with counterparts reported earlier owing to the adoption of p-type FOI channel and specific high-κ dielectrics. The static DC electrical characteristics of the fabricated memory devices including threshold voltage, subthreshold slope, gate breakdown voltage (BVg), source-drain breakdown voltage (BVDS) and memory characteristics such as program/erase (P/E) speed, memory window, endurance, and data retention at room temperature with different P/E approaches have been systematically investigated. A larger memory window, lower P/E voltages, improved P/E speed, as well as good data retention and endurance characteristics with band-to-band hot-electron (BBHE) programming are experimentally obtained. The developed p-channel FOI-MAHAS charge trapping memory is promising for the future nano-scaled NOR-type flash memory applications.