Characterization of P-Channel FOI-MAHAS Charge Trapping Memory with Improved Operation Characteristics

Abstract

In order to enhance scalability, performance and operation efficiency for future embedded flash memory, p-channel fin-on-insulator (FOI) FinFET charge trapping memory devices with HfO 2 charge trapping layer, Al 2 O 3 3 tunneling layer and blocking layers as well as [TiN/W] metal gate (Metal/Al 2 O 3 /HfO 2 /Al 2 O 3 /Si, named as MAHAS) have been successfully fabricated. Afterwards, we systematically investigate the static electrical performance, program/erase speeds, date retention and endurance characteristics of the FOI-MAHAS memory with p-channel. A larger memory window, lower program/erase (P/E) voltages, enhanced P/E speed, along with good data retention and endurance characteristics are experimentally realized. Therefore, the proposed p-channel FOIMAHAS charge trapping memory is promising for future embedded flash memory applications.