Abstract

The electrical performance of concentrated photovoltaic Si cells has been studied underthe application of real sunlight. The photogenerated current increases linearly with cell temperature at a rate of 5 mA/°C, and it increases with the normal incident solar intensity. The difference between the cell temperature and the lowest cooler temperature increases sharply with incident solar intensity. The module open-circuit voltage decreases with increasing cell temperature. The rate decreases with decreasing normal solar intensity. The module open-circuit voltage increases with normal incident solar intensity. The rate decreases as the incident solarintensity increases. The module efficiency decreases with increasing cell temperature at a ratewhich depends on incident solar intensity and cell temperature. As the incident solar intensity increases, the reduction in efficiency per degree rise in cell temperature decreases. For a given cell temperature, the module efficiency increases with incident power to a maximum and then decreases. A normalised empirical formula relating the incident solar intensity to the cell temperature, for the maximum efficiency condition, is obtained.

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