Performance Evaluation of Nano-channel FinFET For Lower Power Application

Abstract

In this paper the simulation of junction less tri-gate nano-channel FinFET is carried out to evaluate and study its different DC and AC/RF characteristics. The Drain Induced Barrier Lowering, $I_{0 n} / I_{\text {off}}$ ratio and Sub-threshold Slope are also studied. Low value of SS of 89.83 mV/dec and higher cutoff frequency of 1.3 THz facilitates the proposed device suitable for low power and high frequency applications.