Abstract
The current study explores the impact of gaussian doping distribution in the channel and gate work function on planar β – Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> MOSFET. The focus is to improve the high power metrics without any trade-off with the RF metrics. Furthermore, the proposed device characteristics and its behavior has been analyzed thoroughly and its comparison with the conventional device design and the device with only gaussian profile without work function engineering has also been drawn. The comparative analysis signifies that the device upon incorporating gaussian doping and work function engineering is efficient for high power switching applications.
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