Abstract
The characteristics of green phosphorescent organic light-emitting diodes (OLEDs) fabricated on ITO/glass substrates pretreated with low-energy O2 and Cl2 plasma were compared. At 20 mA/cm2, the OLEDs with O2 and Cl2 plasma-treated indium tin oxide (ITO) had voltages of 9.6 and 7.6 eV, and brightness of 9580 and 12380 cd/m2, respectively. At ∼104 cd/m2, the latter had a 30% higher external quantum efficiency and a 74% higher power efficiency. Photoelectron spectroscopies revealed that Cl2 plasma treatment created stable In-Cl bonds and raised the work function of ITO by up to 0.9 eV. These results suggest that the better energy level alignment at the chlorinated ITO/organic interface enhances hole injection, leading to more efficient and more reliable operation of the OLEDs. The developed plasma chlorination process is very effective for surface modification of ITO and compatible with the fabrication of various organic electronics.
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