Abstract
The effects of brief etching with Cl2-based inductively coupled plasma (ICP) on the surface chemistry and properties of indium-tin-oxide (ITO) were investigated. Due to the low volatility of InClx, Cl2, and Cl2/BCl3 ICP etching created stable In-Cl polar bonds at the ITO surfaces, raising its work function by up to 1.0 eV. Green phosphorescent organic light-emitting diodes (OLEDs) built on ICP-etched ITO/glass substrates exhibited a brightness of 1.4 × 104 cd/m2 and a current efficiency of 70 cd/A at 20 mA/cm2, which were 40% higher than those of similar OLEDs with an O2 plasma-treated ITO anode. The OLEDs with plasma chlorinated ITO also showed better stability and reliability. These results suggest that brief chlorine plasma etching can result in stable chlorinated ITO surfaces with a high work function, leading to more balanced charge injection and performance enhancement of OLEDs.
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