Performance Enhancement of FinFET Devices with Gate-Stack (GS) High-K Dielectrics for Nanoscale Applications

Abstract

The Fin shaped Field Effect Transistors (FinFETs), are the front runner of the current sub-nanometer technology node. The semiconductor industry adopts it in high-performance (HP) and low-power (LP) applications due to greater electrostatic control and better scalability. This paper explores the numerically simulation based comparison of bulk and silicon-on-insulator (SOI) technology double gate (DG), triple gate (TG) FinFETs. The essential processing steps required to create the GS high-k dielectric bulk and SOI FinFETs are demonstrated. The electrical performance parameters of the device such as Ion/Ioff ratio, subthreshold swing (SS), and drain induced barrier lowering (DIBL) are extracted. Based on the three-dimensional (3D) ATLASTM simulation results, TG FinFET shows an ameliorated performance over DG in bulk and SOI technology as well. In order to control the short channel effects (SCEs), gate-stack (GS) high-k dielectrics are introduced with fixed thickness interfacial-layer (IL) and high-k dielectric material in between the gate material and semiconductor. The GS high-k dielectrics suppress the SCEs to large extent in both devices and technologies. The GS SOI FinFETs demonstrates the improved performance over the bulk counterpart and TG FinFET is the best among them. Further, the similar kind of investigation has been carried out for Tfin variations. These devices reveal the excellent control of SCEs when the fin is narrow. The ratio of SOI and bulk TG FinFET Ion/Ioff ratio with Tfin variations provide evidence that, the SOI based devices are competent for HP and LP applications.