Abstract
A metal ion threshold switch (MITS) based on an Ag/TiN/HfO2/Pt stack is experimentally demonstrated with improved endurance. The incorporation of a low-temperature atomic layer deposition (ALD) TiN layer as an efficient diffusion barrier enables optimum Ag infiltration during the electroforming step. Further, the tunability of the threshold voltage (VTS) from 0.25 to 1.1V via bottom electrode (BE) work function engineering is demonstrated. The Ag/TiN/HfO2/Al MITS selector exhibits a 4.4x increase in VTS, $100~\mu \text{A}$ ON-current handling capability, low leakage (~10 pA), $10^{{7}}$ half-bias non-linearity and fast (<30 ns) turn-ON switching speed. The turn-OFF speed of the selector device is independent of the built-in field, indicating that the latter does not influence ionic relaxation during the filament rupture process.
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