Abstract
Innovative device architectures are necessary to avail the advantages through scaling. One such Gate Engineered Multigate Independent FinFET (MIGFET) has been designed using 22nm technology and electrical characteristics such as drive current, leakage current, Subthreshold Swing (SS), Drain Induced Barrier Lowering (DIBL) are found and compared with conventional Polysilicon gate material based device. Gate engineered devices are created with metals like Tungsten, Gold, Tantalum and Molybdenum. A 6-T SRAM cell is created using Mixed Mode Simulation in TCAD Sentaurus Software. It is found that gate engineered MIGFETs provides 35 to 55% performance enhancement than the polysilicon based FinFET.
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