Abstract
A deterministic time-dependent Boltzmann transport equation (BTE) solver is employed to carry out a comparison work among 10 nm double-gate n-type MOSFETs with channel materials of Si, In0.53Ga0.47As, and GaSb in different surface orientations. Results show that the GaSb device has the highest drive current, while scattering affects carrier transport in the Si device the most. The InGaAs device exhibits the highest injection velocity but suffers from the density of state (DOS) bottleneck seriously.
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