Abstract
6.5 kV SiC PiN diode with JTE and p+ rings termination was fabricated and characterized. The static and dynamic performance of SiC PiN diode were compared with that of SiC JBS diode and silicon diode, while switched in combination with a silicon IGBT. SiC PiN provides clear advantage while operating at higher current densities (above 100 A/cm2) and had lower leakage current. When switched together with a silicon IGBT, they contribute to losses similar to that of a SiC JBS diode.
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