Abstract
The electrical performance of 3.3 kV SiC Schottky, JBS and PiN diodes are compared. In forward mode, the 25 mm 2 Schottky exhibits better performances than the 2.6 mm 2 JBS and PiN diodes. On the other hand, due its very large active area, the Schottky diode show a leakage current of 1 mA, which is 100× and 1000× higher than that of the JBS and PiN diodes, respectively. In switching mode, the Schottky and JBS diodes show similar reverse current peaks (2 A at 300 °C), whereas it is 5× higher for the PiN diode. Concerning the surge current capability, the three diodes present similar surge current capability (around 55 A) at 25 °C. At 225 °C, we have observed a 50% decrease in the surge current of the Schottky diode whereas it is almost the same for the PiN and JBS diodes.
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