Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT

Abstract

This paper presents the characteristics of the first commercial 1200V 100A SiC MOSFET module and compares it with state-of-the-art silicon IGBT with the same rating. The results show that the 1200V SiC MOSFET has faster switching speed and much lower loss compared with silicon IGBT. Moreover, the silicon IGBT switching loss will increase significantly for higher operation temperature, while the SiC MOSFET switching loss is almost the same for different temperature. A loss model has been implemented in PLECs in order to simulation the losses. An 11kW singlephase inverter prototype with 600V dc bus and 380Vac output voltage has been built for evaluating and comparing the SiC MOSFET and Si IGBT performance. The test results match with the simulation very well and show that with 40 kHz switching frequency the inverter efficiency can be increased to 98.5% from 96.5% if replacing the Si IGBT with the SiC MOSFET module.