Abstract
The 3D numerical model of InGaAs quantum dot solar cell is developed and presented in this paper. The device characteristics are examined based on the exact potential and energy profile of the quantum dot obtained from the solution of 3D Poisson and Schrodinger equations using Homotopy decomposition method. The QD current is estimated by considering the QD parameters and the results obtained show that the QD current is strongly influenced by quantum dot density and applied voltage. The characteristics of the quantum dot solar cell such as photocurrent, spectral response, recombination rate for the quantum wavelength and QD layers are obtained for various device parameters. The numerical simulation results exhibit the strength of the proposed model.
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