Abstract
The 3D numerical modeling of nanoscale InGaAs quantum dot is developed and the characteristics of the device are presented. The exact potential and energy profile of the Quantum Dot are computed by obtaining the solution of 3D Poisson and Schrodinger equations using homotopy analysis. The dark current is estimated by considering the Quantum Dot density, applied voltage, length of quantum dot array, number of quantum dot array and temperature. The results obtained show that the dark current is strongly influenced by Quantum Dot density and applied voltage. The developed model is physics based one and overcomes the limitations of the existing analytical models. The model is validated by comparing the results obtained with the existing models.
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