Abstract
The Genus IX-1500 ion implantation system has been developed to meet the needs of users requiring low and medium dose implants from 40 to 3000 keV. A review of the performance characteristics of the system with respect to key parameters such as beam current, beam stability, dose uniformity, implant profiles, wafer throughput, particle performance, ease of operation and maintainability are presented from a users point of view.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
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