Abstract
The use of high energy ion implantation in semiconductor production processes has expanded significantly in the past few years. In order to meet the requirements of these production users. Genus Inc. has developed the 1510 MeV ion implantation system. The 1510 is a second-generation high energy ion implanter and is an evolution of the market leader Genus 1500 system. In this work, a review of the key performance characteristics of the system are presented from a users point of view. Included are parameters such as beam current, beam stability, implant profiles, wafer throughput, particle performance, ease of operation, and serviceability. In particular, the following enhancements in the 1510 are highlighted: (1) ion source innovations, (2) control system and user interface enhancements, (3) automation capabilities, (4) uniformity enhancements, and (5) high tilt angle capabilities.
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