Abstract
We report on the performance characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag-alloy p-type reflectors including AgNi, AgCu, and AgAl. Compared to the reference LEDs fabricated with Ag, LEDs fabricated with AgNi and AgCu produced smaller forward voltages and higher light output power. Under optimized thermal annealing conditions, the forward voltages obtained were 3.56, 3.29, 3.28, and 3.44 V, the light output powers were 14.38, 15.73, 14.40, and 12.77 mW, and the power efficiencies were 20.2%, 23.91%, 21.95%, and 18.45% for LEDs fabricated with Ag, AgNi, AgCu, and AgAl, respectively. The surface morphology of Ag-alloy was also found to be smoother than that of Ag, suggesting that Ag-alloy reflectors, particularly AgNi, are very promising for practical applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
