Abstract
This paper reports a simulation-based study of double gate graded channel junctionless metal field effect transistor (MOSFET) incorporating the effects of doping engineering. The proposed device has been optimised to study the effect of temperature on the device characteristics such as surface potential, transfer characteristics, ION/IOFF ratio and, threshold voltage. To justify the enhanced performance of the graded double gate junctionless (DG-JL) FET, it is compared with non-graded DG-JL-FET. To design and optimise the device, the simulation as a tool takes part in understanding of basic physics. The graded DG-JL-FET has better performance over the conventional DG-JL-FET, in terms of ION/IOFF ratio. The temperature effects on various parameters for 1:3 graded structure are obtained and compared with conventional non-graded structure. The shift in potential towards one side and deeper in case of graded structures, IOFF current reduced significantly without affecting ION current. The threshold voltage roll-off with temperature is found slower in graded structure than that in conventional non-graded structure. In this work, visual TCAD simulation tool is used to simulate the electrical characteristics of the proposed device.
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