Performance and Variability Studies of InGaAs Gate-all-Around Nanowire MOSFETs

Abstract

Furthering Si CMOS scaling requires development of high-mobility channel materials and advanced device structures to improve the electrostatic control. We demonstrate the fabrication of gate-all-around (GAA) indium gallium arsenide (InGaAs) MOSFETs with highly scaled atomic-layer-deposited gate dielectrics. InGaAs, with its high electron mobility, allows higher drive currents and other on-state performance compared to silicon. The GAA structure provides superior electrostatic control of the MOSFET channel with outstanding off-state performance. A subthreshold slope of 72 mV/dec, electron mobility of 764 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s, and an on-current of 1.59 mA/μm are demonstrated, for example. Variability studies on on-state and off-state performances caused by the number of nanowire channels are also presented.