Performance Analysis of Voltage-Controlled Magnetic Anisotropy MRAM-Based Logic Gates and Full Adder

Abstract

In the last decade, spintronics technology has been extensively researched for future non-volatile memories use. VCMA-MRAM exploits the voltage-controlled magnetic anisotropy (VCMA) principle to write data into magnetic tunnel junctions. In this paper, analysis, and comparison of the Energy consumption and delay performance parameter of Voltage Controlled Magnetic Anisotropy (VCMA) based logic gates are being done. This paper has implemented AND/NAND, OR/NOR, XOR/XNOR, and Full Adder using CMOS/VCMA models. Three models of VCMA have been used in this paper for performance analysis and comparison—STT-assisted thermally activated VCMA, STT-assisted precessional VCMA, and Precessional VCMA. The performance of these circuits has been analyzed, and the results have been compared within VCMA modules. Performance parameters like energy consumption and delay has been analyzed in this paper. From the gate latency (delay) and energy consumption analysis, it has been derived that the precessional VCMA-based gates perform better in these domains as compared to the other VCMA model-based gates. It is observed that performance improvements of ∼20% and ∼60% have been seen over STT-assisted precessional VCMA and STT-assisted thermally activated VCMA based gates in terms of gate latency at 1.2 V operating voltage and improvement of around 80% is seen in terms of energy over STT assisted thermally activated magnetic anisotropic MRAM, respectively.