Abstract
In this paper, a novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-TFET) device scaled to a gate length of 12 nm with Contact poly pitch (CPP) of 48 nm is simulated. NS-TFET device is investigated for its electrostatics characteristics using technology computer-aided design (TCAD) simulator. The inter-band tunneling mechanism with a P-I-N layout has been incorporated in the stacked nanosheet devices. The asymmetric design technique for doping has been used for optimum results. NS-TFET provides a low leakage current of order10−16 A, an excellent subthreshold swing (SW) of 23mv/decade, and negligible drain induced barrier lowering (DIBL) having a value of 10.5 mv/V. The notable ON to OFF current ratio of the order of 1011 has been achieved. The device exhibits a high transconductance of 3.022 × 10−5 S at the gate to source voltage of 1 V. The radiation effect of an alpha particle at different energies on NS-TFET is investigated. The injection causes drain current fluctuation for a short span and the result can serve as a guideline for designing of a robust circuit. NS-TFET shows tremendous improvement in short channel effects (SCE) and is a good option for advanced technologies.
Highlights
Nanosheets have emerged as a potential successor to conventional Finfets and stacked nanowires for 7nm technology and beyond [1,2,3]
A novel vertically stacked silicon Nanosheet Tunnel Field Effect Transistor (NS-TFET) device scaled to a gate length of 12nm with Contact poly pitch (CPP) of 48nm is simulated
In NS-FETS, the BTBT mechanism can be incorporated; making it a novel device consisting of vertically stacked nanosheet tunnel field effect transistor (NS-TFET)
Summary
Nanosheets have emerged as a potential successor to conventional Finfets and stacked nanowires for 7nm technology and beyond [1,2,3]. Tunnel Field Effect Transistors (TFETS) provide a remedy for high OFF-state current and exhibit steep SW [14,15,16]. In NS-FETS, the BTBT mechanism can be incorporated; making it a novel device consisting of vertically stacked nanosheet tunnel field effect transistor (NS-TFET). The ultimate aim of NS-TFET is to tune the tunneling barrier at the extended source-channel junction; thereby reducing short channel effects such as low leakage current, minimal DIBL, and superior Subthreshold swing. Stacked Nanosheet transistors exhibit excellent ON-current density due to their increased effective width. The reference structure has n-type symmetrical doping in both source and drain [21] while in NS-TFET; asymmetrical P-I-N configuration has been employed. Shockley-Read-Hall (SRH) model has been considered for carrier recombination mechanism and it stimulates the leakage current that determines Ioff in TFETs [32]
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