Performance analysis of triple material tri gate TFET using 3D analytical modelling and TCAD simulation

Abstract

In this work, a novel Tunnel field effect transistor which is constructed by the combination of tri – gate engineering and triple material gate TFET model is analysed. The three dimensional analytically modelled device shows to modulate the tunnelling boundary at intersection of the source channel in order to achieve a higher rate of band to band tunnelling and a higher accumulation of transporter in the drain area. By improving the gate engineering over the channel area, the device ON current is improved. A general execution of TMTG TFET has been analysed with the device electrical parameters. Surface Potential and electric field are obtained by solving the Poisson’s equation and parabolic approximation method is used to build the precise structure proposed. The drain current is ultimately estimated using Kane's model to measure the generation rate of tunnelling. The performance analysis is done for different doping concentrations of the channel and different oxide thickness. A low leakage current IOFF (10−12 A/µm), with noteworthy improvement in ON current (10−5 A/µm) and the ION/IOFF ratio of 107 is established. In order to approve our current model, analytical results were estimated with the results of Silvaco TCAD.