Performance analysis of surrounding cylindrical gate all around nanowire transistor for biomedical application

Abstract

This paper proposes a highly sensitive, more accurate, and faster device using silicon on insulator based cylindrical surrounding gate all around nanowire (SCGAA-NW) transistor for biomedical sensor applications and different chemicals present in the blood or environment by setting and analysing proper physical parameters of the device. Different physical parameters, channel material (i.e. SiN, CdS, GaN, ZnO, GaP, Si, GaAs, Ge), oxide material (i.e. SiO2, Si3N4, Al2O3, Er2O3, Y2O3, HfO2, Ta2O5, La2O3), channel radius (1-10 nm), oxide thickness (1-10 nm), the concentration of different material have been employed on the sensor acting as a gate to source voltage, drain to source voltage (−0.5 V to 0.5 V), channel doping (107 to 1014) respectively for the best suitable biomedical application in different environments. Analytical modelling of SCGAA-NW transistor was performed by solving 1-D Poisson's equation, using Gauss law and parabolic approximation method using Matlab simulator.