Abstract
In this paper, electrical behavior of symmetric double gate Ge channel MOSFETs with high- k dielectrics is reported on the basis of carrier concentration formalism. The model relies on the solution of Poisson–Boltzmann equations subject to suitable boundary conditions taking into account the effect of interface trap charge density ( D it ) and the Pao-Sah’s current formulation considering field dependent hole mobility. It is continuous as it holds good for sub-threshold, weak and strong inversion regions of device operation. The proposed model has been employed to calculate the drain current of DG MOSFETs for different values of gate voltage and drain voltage along with various important device parameters such as transconductance, output conductance, and transconductance per unit drain current for a wide range of interface trap charge density, equivalent oxide thickness (EOT) and bias conditions. Moreover, most of the important device parameters are compared with their corresponding Si counter parts. Accuracy of the model has been verified by comparing analytical results with the numerical simulation data. A notable improvement of the drive current and transconductance for Ge devices is observed with reference to Si devices, particularly when D it is small.
Published Version
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