Performance analysis of InAs- and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers

Abstract

This study compares the performance of radio frequency (RF) mixers employing independent-gate tunnel field-effect transistors (IG TFETs) based on homo (InAs) and heterojunctions (GaSb-InAs). A RF mixer circuit using double gate TFET of 20 nm is designed with the optimal biases on the two gates. IG TFETs used in the circuit simulation are developed with the help of a look-up table based Verilog-A code. The down conversion of RF mixers are operated at a frequency of 95 GHz. The figures-of-merit (FOM), conversion gain $$(G_{\mathrm {C}})$$ , noise figure (NF) and the average power consumption of the mixer circuits are studied along with the different device parameter variations, gate length $$(L_{\mathrm {g}})$$ , gate oxide thickness $$(T_{\mathrm {ox}})$$ and channel thickness $$(T_{\mathrm {ch}})$$ . Higher $$G_{\mathrm {C}}$$ and lower NF are achieved for heterojunction-based TFET mixers with respect to their parameter variations. An average power consumption of 168 and $$227.5\,{\upmu }\hbox {W}$$ is obtained for homo- and heterojunction-based TFET mixers, respectively.