Abstract
In the literature, the misalignment effects in a nanoscale MOSFETis analyzed for dual material Double gate MOSFET. The analysis is used in the design criterion of the device. In this paper, a two dimensional analytical model of gate misalignment effects in Triple Material Double Gate (TM -DG) MOSFET is presented for the first time. The gate misalignment effect in the drain side is considered. Based on the misaligned gate, the device is split in to six regions. The boundary conditions are obtained considering the electric flux and the potential. The parameters are deriv ed using region based approach. Parameters like surface potential and electric field is studied. In general various methods like superposition method, Fourier series method, Numerical methods are used to analyze the device. In our paper, the parabolic approximation method is used for analytical modeling of TM -DG MOSFET since it is more accurate than the other methods available in the literature. The results are simulated and compared with dual material double gate MOSFET. The device performance is analyzed and it helps in the design scenario.
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