Abstract
Two-dimensional material based Spintronic devices are considered to be the promising next generation nano-electronic devices due to their low power, high speed and enhanced data storage capabilities. In this work, firstly we have investigated the effect of fluorination on the electronic/structural properties of zigzag/armchair silicene. Next, we have modelled a magnetic tunnel junction (MTJ) device consisting of CrO2 electrodes and fluorine passivated armchair silicene nanoribbon as scattering region. The spin dependent transport properties are calculated via first principles calculations combined with non-equilibrium Green's function formalism. The modeled MTJ device shows very large magnetoresistance as compared to the state of art reported devices and high spin injection efficiency. The spin-dependent transmission spectrum and density of states were calculated to elucidate the obtained transport characteristics.
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