Abstract
The present work deals with the simulation of lead-free germanium (Ge) based perovskite solar cell having structure: FTO/SnO2/MAGeI3/Spiro-OMeTAD/Au using one dimensional SCAPS simulator. Initially, the optimisations of absorber thickness and absorber defect density are performed to obtain an efficient and stable device structure. This optimisation results into higher conversation efficiency i.e., 25.34 % (Voc = 1.18 V, Jsc = 24.79 mA/cm2 and FF = 86.54 %). Further, the relations between optimised thickness and absorber defects are also verified and it is found that due to lower diffusion length of charge carriers, the optimised thickness decreases with increase in absorber defect.
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