Performance analysis of an efficient MAC unit using CNTFET technology

Abstract

Interpretation of low power MAC unit (Multiplier Accumulator) is pivotal for the design of VLSI (Very Large Scale Integration) architecture. As Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices are ranged down to micrometer ranges, Complementary Metal Oxide Semiconductor (CMOS) circuit’s aggregate Power consumption has a new sense. The integration of millions of components and constricting process technology, now a day leakage power tends to play a major role in total power consumption. This actuality has encouraged a lot of technologist to choose leakage current minimization as their by-and-by work. Decorous picking of transistor material is requisite in order to assuage low power and high performance circuit. HSPICE compatible CNT model is used to design MAC unit and simulation is done on Avanwaves.