Abstract
To control the position of self-organized InGaAs/AlGaAs quantum disks on a GaAs (311)B substrate, the use of fine silicon nitride dot array was examined. The pentagonally shaped hollow arrays were formed on the metal-organic vapor phase epitaxy grown AlGaAs layer by buried SiN dots due to the competition between the facet and the lateral growth. The following InGaAs layer grew preferentially in these hollows and self-organized quantum disks were formed during growth interruption. Successive growth of AlGaAs/InGaAs epi-layers induced the stacking of quantum disks right on top of the bottom disks. The upper quantum disks were perfectly spatially ordered when the pitch of the array was matched with the self-organized growth mode, with a simultaneous achievement of lateral positioning.
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