Abstract
We exploit the concept of critical coupling to graphene based chip-integrated applications and numerically demonstrate that a perfect absorption (PA) absorber in the near-infrared can be obtained by graphene/Al2O3 multilayer stack (GAMS) critical coupling with a resonant cavity in the 1D photonic crystal nanobeam (PCN). The key point is dynamically matching the coupling rate of incident light wave to the cavity with the absorbing rate of GAMS via electrically modulating the chemical potential of graphene. Simulation results show that the radius of GAMS as well as the thickness of Al2O3 layer are closely connected with the performance of perfect absorption. These results may provide potential applications in the high-density integrated optical devices, photolectric transducers, and laser pulse limiters.
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