Abstract
Recent studies of the structural quality of GaN stripes grown selectively via lateral epitaxial overgrowth (LEO) and pendeo-epitaxy (PE) or maskless lateral epitaxy, reveal that the regions of lateral growth exhibit four-to-five orders of magnitude lower density of dislocations compared to the regions of vertical growth. In both cases the crystallographic templates for the lateral growth are the {112-0}, {11-00}, or the {11-01} side facets of the GaN. The examination of the morphology of the top surfaces, side facets, and interfaces of the LEO- and PE-GaN stripes with the underlying and adjacent interfaces, reveal their striking similarity with the thermally generated stress/strain gradient profiles as calculated via finite element analysis. A comparison between the stress distribution as a result of the mismatches in the coefficients of thermal expansion among the films in the structures, grouped in four types with different geometries will be presented: (I) conventional LEO-GaN, (II) conventional LEO-GaN case without SiO2 layer, (III) PE-GaN mode A, and (IV) PE-GaN mode B.
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