Abstract
This paper presents the results obtained by the electrooptical characterization of a MIS structure built by depositing a film of an Indium Tin Oxide (ITO) on a Silicon Rich Oxide (SRO) film using the Chemical Vapor Deposition Hot Filament (HFCVD) system. The SROHFCVD films were deposited considering two hydrogen fluxes levels at 25 and 100 sccm, under these conditions we grow single and double films, both being heat treated at 1100 ° C to improve their optical and structural characteristics. Through of the techniques of Null Spectroscopy, XPS and Photoluminescence, it was possible to determine the thickness of the SRO films, quantify the silicon excess present in them and analyze their spectra. These films are used as the active layer in Metal-Insulating-Semiconductor (MIS) structures, such structures were electrically characterized through the I-V curves. From the result of these characterizations a comparison is made between the MIS structures with films virgin (V) and with ones heat-treated (T-T). Characterizations indicate that SRO-HFCVD films with T-T significantly modify the optical and electrical properties of MIS structures, which is promising for the design of integrated optical sensors.
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