Abstract
Polycrystalline ZnO and ITO films on SiO2 substrates are prepared by radio frequency (RF) reactive magnetron sputtering. Schottky contacts are fabricated on ZnO films by spin coating with a high conducting polymer, poly(3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) as the metal electrodes. The current—voltage measurements for samples on unannealed ZnO films exhibit rectifying behaviours with a barrier height of 0.72 eV (n = 1.93). The current for the sample is improved by two orders of magnitude at 1 V after annealing ZnO film at 850 °C, whose barrier height is 0.75 eV with an ideality factor of 1.12. X-ray diffraction, atomic force microscopy and scanning electron microscopy are used to study the properties of the PEDOT:PSS/ZnO/ITO/SiO2. The results are useful for applications such as metal—semiconductor field-effect transistors and UV photodetectors.
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