Abstract

We demonstrated that poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/GaAs1–xBix organic–inorganic solar cells, which were fabricated by spin-coating PEDOT:PSS onto GaAs1–xBix thin films grown via molecular beam epitaxy, can capture near-infrared light. The dark current–voltage characteristics of each fabricated solar-cell exhibited diode-like rectification with an ideality factor between 1.5 and 2.0. The open-circuit voltages of the solar cells decreased with increasing the Bi composition in the GaAs1–xBix thin films. The spectral response revealed that the absorption edges of the solar cells were red-shifted as the Bi composition increased, reaching ∼1 eV in the near-infrared region.

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