Abstract
Some technological details of preparing amorphous and microcrystalline silicon carbide films by plasma-enhanced chemical vapor deposition are presented. In contrast to the traditional process, a liquid precursor, methyltrichlorosilane diluted in hydrogen for decomposition in the glow discharge is used. The films were analyzed by different methods with regard to their composition and structure (Auger spectroscopy, optical absorption, electronography, infrared spectroscopy).
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