Abstract
In n-type GaAs thin film structures, the presence of an n- v junction between a low-resistivity film and a semi-insulating compensated substrate causes errors in standard C-V measurements. The true high-frequency capacitance can be measured only with a significant increase in the measuring frequency along with a significant decrease in the amplitude of the applied measuring voltage. The “true” high frequency/low voltage barrier capacitance of n-type GaAs thin film structures is compared with standard measurements.
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