Abstract
Admittance of MOS structures based on Hg1−xCdxTe layers grown by molecular beam epitaxy on semi-insulating GaAs substrates is studied. Effect of anomalous generation on the Hg1−xCdxTe surface in a strong electric field (≈105 V/cm) is found. It is shown that the density of surface states of the MCT — SiO2 interface depends weakly on the presence of the graded energy-gap layer and the type of semiconductor admittance.
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