Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection. Part 2: Experimental verification

Abstract

This paper gives experimental demonstration that the method described in Part 1 of the paper, using data from Human Body Model test on devices, can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. The predicted ESD current damage threshold is demonstrated to give a useful boundary to a ‘safe’ area of ESD current and duration.