Pd/Ge contacts to n-type GaAs

Abstract

Sintered metal-semiconductor contacts, formed by thin, evaporated layers of Pd and Ge on n-type GaAs, were studied using Auger electron spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectroscopy, current-voltage measurements, and capacitance-voltage measurements. Prior to sintering, the as-deposited Pd/Ge/GaAs contacts were rectifying and exhibited a reproducible Schottky barrier energy φ Bn of 0.67±0.02 eV. Auger analysis indicated the initial behavior of the contact structure, upon sintering, to be an interdiffusion and reaction of Pd and Ge on a non-reacting GaAs substrate. Two germanide phases, Pd 2Ge and PdGe, were identified using X-ray diffraction and Auger analysis. The intervening Ge layer prevented the reaction of Pd with the GaAs substrate at low temperatures. Because of the PdGe reaction, φ Bn increased to approximately 0.85 eV. Sintering at higher temperatures (i.e. between 300 and 400°C) produced additional reactions between Pd and the GaAs substrate. The electrical properties of the contact remained rectifying and φ Bn exhibited little change from the value of 0.85 eV with the interdiffusion of Pd, Ga, and As. Sintering above 400°C resulted in the formation of ohmic contacts. The diffusion of Ge to the GaAs interface was found to correlate with the onset of ohmic behavior. Current conduction in the contact was best described by thermionic-field emission theory, and a specific contact resistance of 3.5 × 10 −4Ω-cm 2 was obtained after sintering above 550°C, independent of the initial impurity concentration in the substrate. Over the entire range of sintering temperatures (i.e. at or below 600°C), the interaction between the thin-film layers appeared to be governed by diffusion-controlled, solid-phase processes with no evidence of the formation of a liquid phase. As a result, the surface of the contact structure remained smooth and uniform during sintering.