Abstract

In this present work, high response Pd modified TiO 2 -CuO thin film hydrogen sensors have been prepared by using sol-gel process. Prepared thin film was characterized by field emission scanning electron microscope (FESEM). Sensitivity of hydrogen sensors was observed at operating temperature 50°C-250°C and different gas concentrations (3000 ppm). It has been observed that Pd-doped thin film sensors have better responsivity in comparison with the undoped thin film sensors.

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